Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-11-19
2009-10-13
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S427000, C257SE21665, C365S158000, C365S173000, C365S171000
Reexamination Certificate
active
07602000
ABSTRACT:
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
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Allenspach Rolf
Papworth Parkin Stuart Stephen
Slonczewski John Casimir
Sun Jonathan Zanhong
Terris Bruce David
International Business Machines - Corporation
Kaufman, Esq. Stephen C.
McGinn IP Law Group PLLC
Nguyen Thinh T
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