Spin-current switchable magnetic memory element and method...

Details Spin-current switchable magnetic memory element and method... Spin-current switchable magnetic memory element and method...

2007-12-25

2007-12-25

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C257S427000

Reexamination Certificate

active

10990401

ABSTRACT:
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

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Jonathan Sun, et al. U.S. Appl. No. 10/715,376, filed Nov. 19, 2003.
Huai, Yiming, Albert, Frank, Nguyen, Paul, Pakala, Mahendra, and Valet, Thierry “Observation of Spin-Transfer Switching in Deep Submicron-Sized and Low-Resistance Magnetic Tunnel Junctions” Apr. 19, 2004 Applied Physics Letters vol. 84, No. 16 pp. 3118-3120.
Fuchs, G.D., Emley, N.C., Krivorotov, I.N., Braganca, P.M., Ryan, E.M., Kiselev, S.I., Sankey, J.C., Ralph, D.C., Buhrman, R.A., and Katine, J.A. “Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions” Aug. 16, 2004 Applied Physics Letters vol. 85, No. 7 pp. 1205-1207.

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