Spin based magnetic sensor

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S170000, C257S295000

Reexamination Certificate

active

11741984

ABSTRACT:
A spin based device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance to a spin injected current having a particular spin value. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to an electron current of a particular spin orientation.

REFERENCES:
patent: 3525023 (1970-08-01), Pollack
patent: 3631260 (1971-12-01), Yoshino
patent: 3650581 (1972-03-01), Boden et al.
patent: 3696349 (1972-10-01), Kaske et al.
patent: 3860965 (1975-01-01), Voegeli
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4520300 (1985-05-01), Fradella
patent: 4558236 (1985-12-01), Burrows
patent: 4587636 (1986-05-01), Cosimini et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4663607 (1987-05-01), Kitada et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4754219 (1988-06-01), Milkovic
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4811258 (1989-03-01), Andersen
patent: 4823177 (1989-04-01), Prinz et al.
patent: 4876466 (1989-10-01), Kondou et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 4931670 (1990-06-01), Ting
patent: 4978842 (1990-12-01), Hinton et al.
patent: 4992654 (1991-02-01), Crossland et al.
patent: 4999687 (1991-03-01), Luryi et al.
patent: 5019736 (1991-05-01), Furtek
patent: 5024499 (1991-06-01), Falk
patent: 5058034 (1991-10-01), Murphy et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5109156 (1992-04-01), Evans et al.
patent: 5115497 (1992-05-01), Bergman
patent: 5155434 (1992-10-01), Fujimaki
patent: 5173873 (1992-12-01), Wu et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5218245 (1993-06-01), Kohler
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5304975 (1994-04-01), Saito et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329486 (1994-07-01), Lage
patent: 5361226 (1994-11-01), Taguchi et al.
patent: 5361373 (1994-11-01), Gilson
patent: 5389566 (1995-02-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5416353 (1995-05-01), Kamiguchi et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5453154 (1995-09-01), Thomas et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5493465 (1996-02-01), Kamiguchi et al.
patent: 5524092 (1996-06-01), Park
patent: 5543737 (1996-08-01), Ovshinsky
patent: 5565695 (1996-10-01), Johnson
patent: 5580814 (1996-12-01), Larson
patent: 5587943 (1996-12-01), Torok et al.
patent: 5600845 (1997-02-01), Gilson
patent: 5608593 (1997-03-01), Kim et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629549 (1997-05-01), Johnson
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652445 (1997-07-01), Johnson
patent: 5652875 (1997-07-01), Taylor
patent: 5654566 (1997-08-01), Johnson
patent: 5661062 (1997-08-01), Prinz
patent: 5684980 (1997-11-01), Casselman
patent: 5757525 (1998-05-01), Rao et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5794062 (1998-08-01), Baxter
patent: 5825595 (1998-10-01), Gill
patent: 5862286 (1999-01-01), Imanishi et al.
patent: 5926414 (1999-07-01), McDowell et al.
patent: 5929636 (1999-07-01), Torok et al.
patent: 5939899 (1999-08-01), Frommer et al.
patent: 5998040 (1999-12-01), Nakatani et al.
patent: 6034887 (2000-03-01), Gupta et al.
patent: 6037774 (2000-03-01), Felmlee et al.
patent: 6064083 (2000-05-01), Johnson
patent: 6178112 (2001-01-01), Bessho et al.
patent: 6201259 (2001-03-01), Sato et al.
patent: 6205008 (2001-03-01), Gijs et al.
patent: 6297987 (2001-10-01), Johnson et al.
patent: 6307774 (2001-10-01), Johnson
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6381171 (2002-04-01), Inomata et al.
patent: 6388912 (2002-05-01), Hannah et al.
patent: 6469927 (2002-10-01), Spitzer et al.
patent: 6473337 (2002-10-01), Tran et al.
patent: 6483740 (2002-11-01), Spitzer et al.
patent: 6542000 (2003-04-01), Black et al.
patent: 6639832 (2003-10-01), Hannah et al.
patent: 6741494 (2004-05-01), Johnson
patent: 6750838 (2004-06-01), Hirakata
patent: 6753562 (2004-06-01), Hsu et al.
patent: 6829157 (2004-12-01), Kim et al.
patent: 7009875 (2006-03-01), Johnson
patent: 7193891 (2007-03-01), Johnson
patent: 2004/0130936 (2004-07-01), Nguyen et al.
Meservey, R. et al., “Magnetic Field Splitting of the Quasiparticle States in Superconducting Aluminum Films,” Physical Review Letters, vol. 25, No. 18, pp. 1270-1272, Nov. 2, 1970.
Tedrow, P.M et al, “Spin-Dependent Tunneling into Ferromagnetic Nickel,” Physical Review Letters, vol. 26, No. 4, pp. 192-195, Jan. 26, 1971.
Tedrow, P.M. et al., “Spin Polarization of Electrons Tunneling from Films of Fe, Co, Ni, and Gd,” Physical Review B, vol. 7, No. 1, pp. 318-326, Jan. 1, 1973.
Horowitz, P. et al., The Art of Electronics, Cambridge Univ. Press, Cambridge U.K. (1980); see p. 328.
Johnson, M. et al., “Interfacial Charge-Spin Coupling; Injection and Detection of Spin Magnetization in Metals,” Physical Review Letters, vol. 55, No. 17, pp. 1790-1793, Oct. 21, 1985.
Johnson, M. et al., “Thermodynamic Analysis of Interfacial Transport and of the Thermomagnetoelectric System,” Physical Review B, vol. 35, No. 10, pp. 4959-4972, Apr. 1, 1987.
Van Son, P.C. et al., Boundary Resistance of the Ferromagnetic-Nonferromagnetic Metal Interface, Physical Review Letters, vol. 58, No. 21, pp. 2271-2273, May 25, 1987.
Johnson, M. et al., “Ferromagnet-Nonferromagnet Interface Resistance,” Physical Review Letters, vol. 60, No. 4, p. 377, Jan. 25, 1988.
Johnson, M. et al., “Coupling of Electronic Charge and Spin at a Ferro-magnetic—Paramagnetic Metal Interface,” Physical Review B, vol. 37, No. 10, pp. 5312-5325, Apr. 1, 1988.
Johnson, M. et al., “Spin Injection Experiment,” Physical Review B, vol. 37, No. 10, pp. 5326-5335, Apr. 1, 1988.
Johnson, M. et al., “Electron Spin Injection and Detection at a Ferromagnetic-Paramagnetic Interface,” J. Appl. Phys. 63 (8), pp. 3934-3939, Apr. 15, 1988.
Van Son, P.C. et al., Physical Review Letters, vol. 60, No. 4, p. 378, Jan. 25, 1988.
Popovic, R.S., Hall-effect Devices, Sensors and Actuators, vol. 17. (1989), pp. 39-53.
Daughton, J., “Magnetoresistive Memory Technology,” Thin Solid Films vol. 216, No. 162, Aug. 28, 1992, pp. 162-168.
De Boeck, J. et al., “Non-volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs,” Electronics Letters vol. 29, No. 4, pp. 421-423, Feb. 18, 1993.
Johnson, M., “Spin Accumulation in Gold Films,” Physical Review Letters, vol. 70, No. 14, pp. 2142-2145, Apr. 5, 1993.
Johnson, M., “Bipolar Spin Switch,” Science, vol. 260, Apr. 16, 1993, pp. 320-323.
Johnson, M., “Bilayer Embodiment of the Bipolar Spin Switch,” Appl. Phys. Lett., vol. 63, No. 10, Sep. 6, 1993, pp. 1435-1437.
Johnson, M., “The All-Metal Spin Transistor,” I.E.E.E. Spectrum Magazine, May 1994, pp. 47-51.
Johnson, M., “Spin Polarization of Gold Films via Transported,” J. Appl. Phys. vol. 75, No. 10, May 15, 1994, pp. 6714-6719.
Johnson, M., “Spin-Coupled Resistance Observed in Ferromagnet-Superconductor—Ferromagnet Trilayers,” Appl. Phys. Lett., vol. 65, No. 11, Sep. 12, 1994, pp.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Spin based magnetic sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Spin based magnetic sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin based magnetic sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3872677

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.