Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-05-08
2007-05-08
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S170000, C365S171000
Reexamination Certificate
active
11373667
ABSTRACT:
An electron spin-based device includes ferromagnetic layers with different coercivities, such that one of such layers is responsive to a magnetic field and the other is fixed. A value of an impedance in the spin based device for a spin polarized current varies in accordance with a relationship between a first changeable magnetization state and a second non-changeable magnetization state associated with such ferromagnetic layers.
REFERENCES:
patent: 4314349 (1982-02-01), Batcher
patent: 4360899 (1982-11-01), Dimyan et al.
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4663607 (1987-05-01), Kitada et al.
patent: 4700211 (1987-10-01), Popovic et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 4896296 (1990-01-01), Turner et al.
patent: 4905178 (1990-02-01), Mor et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5173873 (1992-12-01), Wu et al.
patent: 5237529 (1993-08-01), Spitzer
patent: 5239504 (1993-08-01), Brady et al.
patent: 5245226 (1993-09-01), Hood et al.
patent: 5245227 (1993-09-01), Furtek et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5289410 (1994-02-01), Katti et al.
patent: 5329480 (1994-07-01), Wu et al.
patent: 5329486 (1994-07-01), Lage
patent: 5396455 (1995-03-01), Brady et al.
patent: 5420819 (1995-05-01), Pohm
patent: 5424236 (1995-06-01), Daughton et al.
patent: 5432373 (1995-07-01), Johnson
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5452163 (1995-09-01), Coffey et al.
patent: 5475277 (1995-12-01), Johnson
patent: 5488250 (1996-01-01), Hennig
patent: 5491338 (1996-02-01), Spitzer
patent: 5580814 (1996-12-01), Larson
patent: 5594366 (1997-01-01), Khong et al.
patent: 5608593 (1997-03-01), Kim et al.
patent: 5621338 (1997-04-01), Liu et al.
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5652875 (1997-07-01), Taylor
patent: 5998040 (1999-12-01), Nakatani et al.
patent: 6064083 (2000-05-01), Johnson
patent: 6205008 (2001-03-01), Gijs et al.
patent: 6342713 (2002-01-01), Johnson
patent: 6381170 (2002-04-01), Prinz
patent: 6388916 (2002-05-01), Johnson
patent: 6809959 (2004-10-01), Johnson
patent: 6870761 (2005-03-01), Johnson
patent: 6975533 (2005-12-01), Johnson
patent: 7020013 (2006-03-01), Johnson
patent: 2004/0130936 (2004-07-01), Nguyen et al.
Meservey, R. et al., “Magnetic Field Splitting of the Quasiparticle States in Superconducting Aluminum Films,” Physical Review Letters, vol. 25, No. 18, pp. 1270-1272, Nov. 2, 1970.
Tedrow, P.M et al, “Spin-Dependent Tunneling into Ferromagnetic Nickel,” Physical Review Letters, vol. 26, No. 4, pp. 192-195, Jan. 26, 1971.
Tedrow, P.M. et al., “Spin Polarization of Electrons Tunneling from Films of Fe, Co, Ni, and Gd,” Physical Review B, vol. 7, No. 1, pp. 318-326, Jan. 1, 1973.
Horowitz, P. et al., The Art of Electronics, Cambridge Univ. Press, Cambridge U.K. (1980); see p. 328.
Johnson, M. et al., “Interfacial Charge-Spin Coupling; Injection and Detection of Spin Magnetization in Metals,” Physical Review Letters, vol. 55, No. 17, pp. 1790-1793, Oct. 21, 1985.
Johnson, M. et al., “Thermodynamic Analysis of Interfacial Transport and of the Thermomagnetoelectric System,” Physical Review B, vol. 35, No. 10, pp. 4959-4972, Apr. 1, 1987.
Van Son, P.C. et al., Boundary Resistance of the Ferromagnetic-Nonferromagnetic Metal Interface, Physical Review Letters, vol. 58, No. 21, pp. 2271-2273, May 25, 1987.
Johnson, M. et al., “Ferromagnet-Nonferromagnet Interface Resistance,” Physical Review Letters, vol. 60, No. 4, p. 377, Jan. 25, 1988.
Johnson, M. et al., “Coupling of Electronic Charge and Spin at a Ferro-magnetic—Paramagnetic Metal Interface,” Physical Review B, vol. 37, No. 10, pp. 5312-5325, Apr. 1, 1988.
Johnson, M. et al., “Spin Injection Experiment,” Physical Review B, vol. 37, No. 10, pp. 5326-5335, Apr. 1, 1988.
Johnson, M. et al., “Electron Spin Injection and Detection at a Ferromagnetic-Paramagnetic Interface,” J. Appl. Phys. 63 (8), pp. 3934-3939, Apr. 15, 1988.
Van Son, P.C. et al., Physical Review Letters, vol. 60, No. 4, p. 378, Jan. 25, 1988.
Popovic, R.S., Hall-effect Devices, Sensors and Actuators, vol. 17, (1989), pp. 39-53.
Daughton, J., “Magnetoresistive Memory Technology,” Thin Solid Films vol. 216, No. 162, Aug. 28, 1992, pp. 162-168.
De Boeck, J. et al., “Non-volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnA1 Films on GaAs,” Electronics Letters vol. 29, No. 4, pp. 421-423, Feb. 18, 1993.
Johnson, M., “Spin Accumulation in Gold Films,” Physical Review Letters, vol. 70, No. 14, pp. 2142-2145, Apr. 5, 1993.
Johnson, M., “Bipolar Spin Switch,” Science, vol. 260, Apr. 16, 1993, pp. 320-323.
Johnson, M., “Bilayer Embodiment of the Bipolar Spin Switch,” Appl. Phys. Lett., vol. 63, No. 10, Sep. 6, 1993, pp. 1435-1437.
Johnson, M., “The All-Metal Spin Transistor,” I.E.E.E. Spectrum Magazine, May 1994, pp. 47-51.
Johnson, M., “Spin Polarization of Gold Films via Transported,” J. Appl. Phys. vol. 75, No. 10, May 15, 1994, pp. 6714-6719.
Johnson, M., “Spin-Coupled Resistance Observed in Ferromagnet-Superconductor—Ferromagnet Trilayers,” Appl. Phys. Lett., vol. 65, No. 11, Sep. 12, 1994, pp. 1460-1462.
Johnson, M., “The Bipolar Spin Transistor,” I.E.E.E. Potentials, pp. 26-30, Feb./Mar. 1995.
Chui, S.T. et al., “Spin Transmission in Metallic Trilayers,” Physical Review Letters, vol. 74, No. 11, Mar. 13, 1995, pp. 2118-2121.
Moodera, J.S. et al., “Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions,” Physical Review Letters, vol. 74, No. 16, Apr. 17, 1995, pp. 3273-3276.
Nakatani, R. et al., “Changes in the Electrical Resistivity of Fe-C/Al2O3/Fe-Ru multilayered films due to a magnetic field,” Jour. of Materials Science Letters 10 (1991), pp. 827-828.
Auduong Gene N.
Gross J. Nicholas
Spinop Corporation
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