Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-08-30
1995-10-10
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 250391, 250305, H01J 37317
Patent
active
054573246
ABSTRACT:
An ion implanter for implanting ions into a semiconductor wafer comprises means for generating an ion beam, means for receiving charged particles ejected from the ion beam, first means for rejecting those of the received charged particles below a first predetermined energy, second means for rejecting those of the received charged particles above a second predetermined energy, the first predetermined energy being lower than the second predetermined energy. The ion implanter further comprises means to count the number of received charged particles between the first and second predetermined energies, and scanning means for scanning the first and second predetermined energies to determine the energy at which the number of received charged particles between the first and second predetermined energies is a maximum.
REFERENCES:
patent: 3857090 (1974-12-01), Chick
patent: 5113074 (1992-05-01), Sferlazzo
patent: 5198676 (1993-03-01), Benveniste et al.
patent: 5384465 (1995-01-01), Armour et al.
Armour David G.
Bryan Neil
England Johnathan G.
Van den Berg Jakob A.
Applied Materials Inc.
Berman Jack I.
Cross Rupert E.
Guenzer Charles S.
Stone A. Oliver
LandOfFree
Spectrum analyzer in an ion implanter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spectrum analyzer in an ion implanter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spectrum analyzer in an ion implanter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2312117