Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-09-17
1995-01-24
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 250397, 250305, H01J 37317
Patent
active
053844653
ABSTRACT:
An ion implanter for implanting ions into a semiconductor wafer comprises means for generating an ion beam, means for receiving charged particles ejected from the ion beam, first means for rejecting those of the received charged particles below a first predetermined energy, second means for rejecting those of the received charged particles above a second predetermined energy, the first predetermined energy being lower than the second predetermined energy. The ion implanter further comprises means to count the number of received charged particles between the first and second predetermined energies, and scanning means for scanning the first and second predetermined energies to determine the energy at which the number of received charged particles between the first and second predetermined energies is a maximum.
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patent: 5198676 (1993-03-01), Benveniste et al.
"SXP-CMA Plasma Sampling System", VG Quadrupoles, Sep. 14, 1993, pp. 13-21.
"Measurements of space charge compensation of ion beams", (Kreisler), Vacuum, vol. 34, pp. 215-216.
"Methods of surface analysis", (Seah), Cambridge Univ. Press, Sep. 14, 1993, pp. 59-75.
"HA50 Series of Bolt-on Electron Energy Analysers", VSW Scientific Instruments Ltd., Sep. 14, 1993, pp. 11-12.
"Theoretical and experimental study of space charge in intense ion beams", Physical Review A, (Holmes), Jan. 1979, pp. 389-407.
Armour David G.
Bryan Neil
England Johnathan G.
Van der Berg Jakob A.
Applied Materials Inc.
Berman Jack I.
Guenzer Charles S.
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