Spectroscopic scatterometer system

Details Spectroscopic scatterometer system Spectroscopic scatterometer system

2007-02-06

2007-02-06

Nguyen, Tu T. (Department: 2877)

Optics: measuring and testing

By polarized light examination

Of surface reflection

Reexamination Certificate

active

10251246

ABSTRACT:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

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