Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2011-03-01
2011-03-01
Nguyen, Tu T (Department: 2886)
Optics: measuring and testing
By polarized light examination
Of surface reflection
Reexamination Certificate
active
07898661
ABSTRACT:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
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Abdulhalm Ibrahim
Xu Yiping
Davis , Wright, Tremaine, LLP
Kla-Tencor Corporation
Nguyen Tu T
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