Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2006-01-03
2006-01-03
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By polarized light examination
Of surface reflection
Reexamination Certificate
active
06982792
ABSTRACT:
Disclosed are improvements in ellipsometer and the like systems capable of operating in the Vacuum-Ultra-Violet (VUV) to Near Infrared (NIR) wavelength range, and methodology of use.
REFERENCES:
patent: 4210401 (1980-07-01), Batten
patent: 4472633 (1984-09-01), Motooka
patent: 5045701 (1991-09-01), Goldstein et al.
patent: 5373359 (1994-12-01), Woollam et al.
patent: 5486701 (1996-01-01), Norton et al.
patent: 5582646 (1996-12-01), Woollam et al.
patent: 5661589 (1997-08-01), Meyer
patent: 5706212 (1998-01-01), Thompson et al.
patent: 5757494 (1998-05-01), Green et al.
patent: 5872630 (1999-02-01), Johs et al.
patent: 5929995 (1999-07-01), Johs
patent: 5956145 (1999-09-01), Green et al.
patent: 5963327 (1999-10-01), He et al.
patent: 6034777 (2000-03-01), Johs et al.
patent: 6414302 (2002-07-01), Freeouf
patent: 6456376 (2002-09-01), Liphardt et al.
patent: 6535286 (2003-03-01), Green et al.
patent: 6804004 (2004-10-01), Johs et al.
patent: 2002/0024668 (2002-02-01), Stehle et al.
“Determination of the Ellipticity of Light and of Optical Constants by Use of Two Reflection Polarizers”; M. Schledermann and M. Skibowski, Appl. Opt. 10 321 (1971).
“Spectroscopic Ellipsometry with Synchrotron Radiation: Latest Developments”; .J. Barth, R. L. Johnson, S. Logothetidis, and M. Cardona,, SPIE Proceedings—Soft X-Ray Optics and Technology 733, 265 (1986).
“Thin Film Ellipsometry at a Photon Energy of 97eV”; M. Yamamoto K. Mayama, H. Kimura, Y. Goto, and M. Yanagihara, Journal of Electron Spectroscopy and Related Phenomena 80, 465 (1996).
Spectroscopic Ellipsometry With Synchrotron Radiation; R. L. Johnson, J. Barth, M. Cardona, D. Fuchs, and A. M. Bradshaw, Rev. Sci. Instrum., 60, 2209 (1989).
“Design and Performance of a VUV Ellipsometer”; R. L. Johnson, J. Barth, M. Cardona, D. Fuchs, and A. M. Bradshaw, Nuclear Instruments and Methods in Physics Research, A290, 606 (1990).
“Spectroscopic Ellipsometry in the 6-35 eV Region”; J. Barth, R. L. Johnson, and M. Cardona, in Handbook of Optical Constants of Solids II, edited by E. D. Palik, Academic Press, San Diego, 213 (1991).
“Dielectric Function of CaF2 between 10 and 35 eV”; J. Barth, R. L. Johnson, M. Cardona, D. Fuchs, and A. M. Bradshaw, Phys. Rev. B, 41, 3291 (1990).
“Ellipsometry of Graphite and the C8K Intercalation Compound Between 5 and 30 eV”; D. Fuchs, R. Schlgl, A. M. Bradshaw, J. Barth, R. L. Johnson, and M. Cardona, Synthetic Metals, 34, 417 (1989).
“Origin and Temperature Dependence of the First Direct Gap of Diamond”; S. Logothetidis, J. Petalas, H. M. Polatoglou, and D. Fuchs, Phys. Rev. B, 46, 4483 (1992).
“The Optical Properties of a—C:H Films Between 1.5 and 10 eV and the Efect of Thermal Annealing on the Film Character”; S. Logothetidis, J. Petalas, and S. Ves, J. Appl. Phys., 79,1039 (1996).
“Spectroscopic Ellipsometry Studies on BN From IR to Vacuum UV Energy Region”; Y. Panayiotatos, S. Logothetidis, A. Laskarakis, A. Zervopoulou, and M. Gioti, Diamond and Related Materials, 11, 1281 (2002).
“Investigation of the Electronic Transition of Cubic SiC”; S. Logothetidis, H. M. Polatoglou, J. Petalas, D. Fuchs, and R. L, Johnson, Physica B, 185, 389 (1993).
“Dielectric Function and Reflectivity of 3C-Silicon Carbide and the Component Perpendicular to the c Axis of 6H-Silicon Carbide in the Energy Region 1.5-9.5 eV”; S. Logothetidis and J. Petalas, J. Appl. Phys., 80, 1768 (1996).
Optical Properties of Thin Film Si—C Films: Surface Modification By Ex-Situ Hydrogenation; C. Janowitz, J. Kalomiros, A. Ginoudi, E. C. Paloura, and R. L. Johnson, Solid State Commun., 99, 29 (1996).
“Comparison Between the Electronic Dielectric Functions of a GaAs/AlAs Superlattice and its Bulk Components by Spectroscopic Ellipsometry Using Core Levels”; O. Gunther, C. Janowitz, G. Jungk, B. Jenichen, R. Hey, L. Dweritz, and K. Ploog, Phys. Rev. B, 52, 2599 (1995).
“Optical Properties and Temperature Depemdemce of the Interband Transitions of Cubic and Hexagonal GaN”; S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Phys. Rev. B, 50, 18017 (1994).
“The Optical Properties and Electronic Transitions of Cubic and Hexagonal GaN Films Between 1.5 and 10 eV”; S. Logothetidis, J. Petalas, M. Cardona, and T. D. Moustakas, Materials Science and Engineering, B29, 65 (1995).
“Optical and Electronic-Structure Study of Cubic abd Hexaginal GaN Thin Film”; J. Petalas, S. Logothetidis, S. Boultadakis, M. Alouani, and J. M. Wills, Phys. Rev. B, 52, 8082 (1995).
“Dielectric Function of Hexagonal AIN Films Determined by Spectroscopic Ellipsometry in the Vacuum-UV Spectral Range”; T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann, and M. Cardona, Phys. Rev. B, 59, 1845 (1999).
“Dielectric Function of Wurtzite GaN and AIN Thin Films”; L. X. Benedict, T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, E. L. Shirley, W. Richter, and M. Cardona, Solid State Commun., 112, 129 (1999).
“Spectroscopic Ellipsometry Measurements of AlxGA1−xN in the Energy Range 3-25 eV”; T. Wethkamp, K. Wilmers, N. Esser, W. Richter, O. Ambacher, H. Angerer, G. Jungk, R. L. Johnson, and M. Cardona, Thin Solid Films, 313-314, 745 (1998).
“Ellipsometric Studies of BexZn1−xSe Between 3 eV and 25 eV”; K. Wilmers, T. Wethkamp, N. Esser, C. Cobet, W. Richter, M. Cardona, V. Wagner, H. Lugauer, F. Fischer, T. Gerhard, and M. Keim, Phys. Rev. B, 59, 10071 (1999).
“VUV Ellipsometry on Beryllium Chalcogenides”; K. Wilmers, T. Wethkamp, N Esser, C. Cobet, W. Richter, V. Wagner, A. Waag, H Lugauer, F. Fischer, T. Gerhard, M Keim, and M. Cardona, Phys. Stat. Sol. B, 215, 15 (1999).
“VUV-Ellipsometry on BexZn1−xSe and BeTe”; Wilmers, T. Wethkamp, N Esser, C. Cobet, W. Richter, V. Wagner, H Lugauer, F. Fischer, T. Gerhard, M Keim, and M. Cardona, Journal of Electronic Materials, 28, 670 (1999).
“Dielectrtic Function and Critical Points of Cubic and Hexagonal CdSe”; C. Janowitz, O. Gunther, G. Jungk, R. L. Johnson, P. V. Santos, M. Cardona, W. Faschinger, and H. Sitter, Phys. Rev. B, 50, 2181 (1994).
“Spectroscopic Ellipsometry on 1T—TiSe2”; T. Buslaps, R. L. Johnson, and G. Jungk, Thin Solid Films, 234, 549 (1993).
“Interband Transitions in YBa2Cu3O7”; J. Kircher, J. Humlcek, M. Garriga, M. Cardona, D. Fuchs, H. U. Habermeier, O. Jepsen, Sudha Gopalan, O. K. Anderson, Y. Fang, U. Welp, K. G. Vandervoort, and G. W. Crabtree, Physica C, 192, 473 (1992).
“Physical Studies of Cu—Ni, Pd—Ni and Co—Pt Multilayers by Conventional and Synchrotron adiation Techniques”; S. Logothetidis, J. Petalas, N. K. Flevaris, and R. L. Johnson, Thin Solid Films, 234, 538 (1993).
“Ellipsometric and Polar Kerr Spectroscopic Studies of Pd—Ni and Co—PT Multilayers”; N. K. Flevaris, S. Logothetidis, J. Petalas, P. Kielar, M Nyvlt, V. Parizek, S. Visnovsky, and R. Krishnan, Journal of Magnetism and Magnetic Materials, 121, 479 (1993).
“Optical and Electronic Properties Modifications in Pd—Ni Multilayers”; S. Logothetidis and N. K. Flevaris, J. Appl. Phys., 75, 7978 (1994).
“Characterization of SiN Thin Films With Spectroscopic Ellipsometry”; J. Petalas, S. Logothetidis, A. Markwitz, E. C. Paloura, R. L. Johnson, and D. Fuchs, Physica B, 185, 342 (1993).
“Optical and Composition Studies of SiN Thin Films With Conventional and Sybchrotron Radiation Ellipsometry”; S. Logothetidis, J. Petalas, A. Markwitz, and R. L. Johnson, J. Appl. Phys., 73, 8414 (1993).
“Tetrahedron-Model Analysis of Silicon Nitride Thin Films and the Effect of Hydrogen and Temperature on Their Optical Properties”; J. Petalas and S. Logothetidis, Phys. Rev. B, 50, 11801 (1994).
“The Effect of Hydrogen and
Green Steven E.
Guenther Brian D.
He Ping
Herzinger Craig M.
Johs Blaine D.
J.A. Woollam Co. INC
Punnoose Roy M.
Toatley , Jr. Gregory J.
Welch James D.
LandOfFree
Spectrophotometer, ellipsometer, polarimeter and the like... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spectrophotometer, ellipsometer, polarimeter and the like..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spectrophotometer, ellipsometer, polarimeter and the like... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3559330