Compositions: coating or plastic – Coating or plastic compositions – Heavy metal compound containing
Patent
1994-09-08
1996-05-14
Brunsman, David
Compositions: coating or plastic
Coating or plastic compositions
Heavy metal compound containing
10628719, C09D 400
Patent
active
055163637
ABSTRACT:
Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.
REFERENCES:
patent: 4946710 (1990-08-01), Miller et al.
patent: 5034550 (1991-07-01), Sherif
patent: 5046043 (1991-09-01), Miller et al.
patent: 5217754 (1993-08-01), Santiago-Aviles et al.
Melnick, B. M., et al; Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT for Ferroelectric Memories, Ferroelectrics (1990), vol. 109, pp. 1-23.
Vest, G. M., et al; Synthesis of Metallo-Organic Compounds for Mod Powders and Films, Mat. Res. Soc. Symp. Proc., (1986), vol. 60, pp. 35-42.
Mantese, J. V., et al; Metalorganic Deposition (Mod): A Nonvacuum, Spin-On, Liquid-Based, Thin Film Method. MRS Bulletin (Oct. 1989), pp. 48-53.
Vest, R. W., et al; PBTIO3 Films From Metalloorganic Precursors. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control (Nov. 1988), vol. 35, No. 6, pp. 711-717.
Azuma, M., et al; Electrical Characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics. Presentation, 1992 ISIF Conference, (Mar. 9-11, 1992), pp. 109-117.
Mihara, T., et al; Feasibility for Memory Devices and Electrical Characterization of Newly Developed Fatigue Free Capacitors; Presentation, 1992 ISIF Conference, (Mar. 9-11, 1992), pp. 137-157.
Lines, M. E., et al; Principles and Applications of Ferroelectrics and Related Materials; (1977), Clarendon Press (Oxford), pp. 241-292, 620-633.
McMillan, L. D., et al; Deposition of Ba1-XSRXTIO3 and SRTIO3 via Liquid Source CVD (LSCVD) for ULSI DRAMs. Presentation, 1992 ISIF Conference, (Mar. 9-11, 1992), private paper.
Azuma Masamichi
Melnick Bradley M.
Paz De Araujo Carlos A.
Scott Michael C.
Brunsman David
Matsushita Electronics Corporation
Symetrix Corporation
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