Special mode control method for dynamic random access memory

Details Special mode control method for dynamic random access memory Special mode control method for dynamic random access memory

1992-11-16

1995-04-25

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518905, G11C 1300

Patent

active

054105072

ABSTRACT:
A dynamic RAM provided with a data retention mode intended for low power consumption is provided. In the data retention mode, the current supply capabilities of voltage generation circuits which generate decreased voltage, increased voltage, reference voltage, etc., are limited in the range in which information retention operation in memory cells can be maintained, and the number of selected memory mats in the data retention mode is increased with respect to that of memory mats selected in the normal read/write mode and refresh mode. Special modes such as the data retention mode are set by combining an address strobe signal and other control signals and dummy CBR refresh is executed to release the special mode.

REFERENCES:
patent: 5172341 (1992-12-01), Amin
"Technical Bulletin ED-90-78 of Institute of Electronics and Communication Engineers of Japan".

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