Spatial correlation of reference cells in resistive memory...

Details Spatial correlation of reference cells in resistive memory... Spatial correlation of reference cells in resistive memory...

2011-01-25

2011-01-25

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S171000, C365S210100, C365S185200

Reexamination Certificate

active

07876599

ABSTRACT:
The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

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