Spacers used to form isolation trenches with improved corners

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

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437 67, H01L 4900

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active

057333831

ABSTRACT:
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating material extends over the peripheral edge of the trench, thereby covering at least a portion of the substrate surrounding the trench, and substantially limiting leakage of the active devices disposed on the substrate.

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