Spacer patterns using assist layer for high density...

Details Spacer patterns using assist layer for high density... Spacer patterns using assist layer for high density...

2011-06-14

2011-06-14

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S261000, C438S262000, C438S264000, C438S595000, C438S701000, C257SE21179, C257SE21209, C257SE21422, C257SE21680, C257SE21681

Reexamination Certificate

active

07960266

ABSTRACT:
High density semiconductor devices and methods of fabricating the same are provided. Spacer fabrication techniques are utilized to form circuit elements having reduced feature sizes, which in some instances are smaller than the smallest lithographically resolvable element size of the process being used. Spacers are formed that serve as a mask for etching one or more layers beneath the spacers. An etch stop pad layer having a material composition substantially similar to the spacer material is provided between a dielectric layer and an insulating sacrificial layer such as silicon nitride. When etching the sacrificial layer, the matched pad layer provides an etch stop to avoid damaging and reducing the size of the dielectric layer. The matched material compositions further provide improved adhesion for the spacers, thereby improving the rigidity and integrity of the spacers.

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