Source side injection storage device and method therefor

Details Source side injection storage device and method therefor Source side injection storage device and method therefor

2007-01-02

2007-01-02

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C257SE21444, C438S180000, C977S943000

Reexamination Certificate

active

11170444

ABSTRACT:
A memory charge storage device has regions of sacrificial material overlying a substrate (12). For each memory cell a first doped region (20) and a second doped region (24) are formed within the substrate and on opposite sides of one (16) of the regions of sacrificial material. A discrete charge storage layer (28) overlies the substrate and is between the regions of sacrificial material. In one form a control electrode (34) is formed per memory cell overlying the substrate with an underlying substrate diffusion and laterally adjacent one of the regions of sacrificial material. A third substrate diffusion (60) is positioned between the two control electrodes. In another form two control electrodes are formed per memory cell with a substrate diffusion underlying each control electrode. In both forms a select electrode (64) overlies and is between both of the two control electrodes.

REFERENCES:
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6373096 (2002-04-01), Hisamune et al.
patent: 6687156 (2004-02-01), Kobayashi et al.
patent: 6992349 (2006-01-01), Lee et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2003/0080372 (2003-05-01), Mikolajick
patent: 2005/0218522 (2005-10-01), Nomoto et al.
patent: 2005/0243603 (2005-11-01), Kobayashi et al.
patent: 2006/0018164 (2006-01-01), Wu
patent: 2006/0076586 (2006-04-01), Swift et al.
patent: 2006/0076606 (2006-04-01), Lojek
patent: 2006/0076609 (2006-04-01), Chindalore et al.
patent: 2006/0079051 (2006-04-01), Chindalore et al.
patent: 2006/0079455 (2006-04-01), Gazit et al.
patent: 2006/0086970 (2006-04-01), Kim

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