Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-08-20
2000-07-11
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257298, 257314, 257315, 257316, 257326, H01L 29788
Patent
active
060876956
ABSTRACT:
A semiconductor flash memory cell. A p-well is formed in a semiconductor substrate. A thin oxide layer is formed over the p-well and semiconductor substrate. A dielectric pillar extending up from the semiconductor substrate is formed to support a control gate. A select gate is formed that extends underneath the control gate to be between the control gate and the thin oxide layer. Next, a floating gate is formed to extend underneath the control gate to be between the control gate and the thin oxide layer. A source region is formed in the p-well to be adjacent to the floating gate. Finally, a drain is formed in the p-well, the drain formed adjacent to the select gate.
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Hardy David
Ortiz Edgardo
Worldwide Semiconductor MFG
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