Source reagent compositions for CVD formation of gate...

Details Source reagent compositions for CVD formation of gate... Source reagent compositions for CVD formation of gate...

2006-02-28

2006-02-28

Eckert, George (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C534S015000, C427S124000

Reexamination Certificate

active

07005392

ABSTRACT:
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1and R2is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8alkyl, C1–C8perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1and R2is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8alkyl, and C1–C8perfluoroalkyl. By comparison with the standard SiO2gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

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