Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-15
2011-03-15
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S208000, C257SE29278
Reexamination Certificate
active
07906820
ABSTRACT:
A semiconductor device is disclosed. The semiconductor device includes a source offset type MOS transistor in which a source and a drain are formed on a semiconductor substrate by having a predetermined distance between the source and the drain, and a gate electrode is formed on the semiconductor substrate between the source and the drain via a gate insulation film. One end of the drain overlaps or abuts on one end of the gate electrode when viewed from above the gate electrode, and the source is formed by having a distance from the gate electrode when viewed from above the gate electrode.
REFERENCES:
patent: 5198379 (1993-03-01), Adan
patent: 5256584 (1993-10-01), Hartmann
patent: 2001-185724 (2001-07-01), None
patent: 2002-261273 (2002-09-01), None
patent: 3513411 (2004-01-01), None
patent: 2006-216607 (2006-08-01), None
patent: 2008-21962 (2008-01-01), None
Cooper & Dunham LLP
Parker Allen L
Ricoh & Company, Ltd.
Sefer A.
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