Source inner shield for eaton NV-10 high current implanter

Details Source inner shield for eaton NV-10 high current implanter Source inner shield for eaton NV-10 high current implanter

1997-01-13

1998-06-09

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3720

Patent

active

057638950

ABSTRACT:
A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.

REFERENCES:
patent: 4719355 (1988-01-01), Meyers et al.
patent: 5391275 (1995-02-01), Mintz
patent: 5455426 (1995-10-01), Forgey et al.
patent: 5497006 (1996-03-01), Sferlazzo et al.

Affiliated with

Also associated with

Rating

Source inner shield for eaton NV-10 high current implanter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Source inner shield for eaton NV-10 high current implanter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Source inner shield for eaton NV-10 high current implanter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2203102