Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-04-06
1999-03-16
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250423R, H01J 2702
Patent
active
058833935
ABSTRACT:
A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.
REFERENCES:
patent: 4719355 (1988-01-01), Meyers et al.
patent: 5252892 (1993-10-01), Koshiishi et al.
patent: 5256947 (1993-10-01), Toy et al.
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5656820 (1997-08-01), Murakoshi et al.
patent: 5763895 (1998-06-01), Tien et al.
Chang H. J.
Tien Fu-Kang
Ackerman Stephen B.
Nguyen Kiet T.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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