Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-03-31
1995-04-04
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257758, 257773, 361 56, 361 91, H01L 2704, H01L 2978
Patent
active
054040418
ABSTRACT:
An ESD/EOS protection circuit (100) for protecting an integrated circuit. A MOS transistor (102) is arranged in a multi-finger configuration having a plurality of drain regions (124), a plurality of source regions (122) and a plurality of gates (118). A first metal layer (162) substantially covers each of the drain regions (124) and is in contact with each of the drain regions (124) via drain contacts (130). A second metal layer (154) substantially covers each of the source regions (122) and is in contact with each of the source regions via source contacts (128). A plurality of source contacts (128) are located at a minimum distance from gates (118). Metal-to-metal contacts (160) connect a third metal layer (156) with the second metal layer (154) over each of the source regions (122).
REFERENCES:
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4952994 (1990-08-01), Lin
Diaz Carlos H.
Duvvury Charvaka
Kang Sung-Mo
Donaldson Richard L.
Garner Jacqueline J.
Hiller William E.
Prenty Mark V.
Texas Instruments Incorporated
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