Source connection structure for lateral RF MOS devices

Details Source connection structure for lateral RF MOS devices Source connection structure for lateral RF MOS devices

1998-02-07

1999-09-07

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257383, 257384, 257343, H01L 29423, H01L 2943, H01L 29739

Patent

active

059491043

ABSTRACT:
A source connection structure for a lateral RF MOS device is disclosed. The connection structure utilizes a conductive plug to connect a source area and a body area of the device with a backside. The usage of a conductive plug eliminates at least one doping area used for connectivity purposes. Therefore, the density of RF MOS devices per unit area of the chip is increased.

REFERENCES:
patent: 4682405 (1987-07-01), Blanchard et al.
patent: 5155563 (1992-10-01), Davies et al.
patent: 5548150 (1996-08-01), Omura et al.
patent: 5841166 (1998-11-01), D'Anna et al.

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