Source bridge for cooling and/or external connection

Details Source bridge for cooling and/or external connection Source bridge for cooling and/or external connection

2007-12-04

2007-12-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S106000, C438S107000, C438S108000, C438S109000, C438S110000, C438S112000, C438S113000, C438S121000, C438S124000, C438S125000, C438S126000, C257SE21508

Reexamination Certificate

active

11180471

ABSTRACT:
A FET includes elongated, mutually parallel source regions separated by gate and drain regions. Conductive bridges extend over the gate and drain regions and not in electrical contact therewith to electrically and thermally interconnect the sources. A layer of dielectric is applied over surfaces, and an aperture is defined over the bridges. A thick layer of metal is applied over and in thermal and electrical contact with the bridges. Electrical and thermal connections can be made to the thick metal.

REFERENCES:
patent: 5353498 (1994-10-01), Fillion et al.
patent: 6306680 (2001-10-01), Fillion et al.

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