Source and method for generating high-density plasma with induct

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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31511181, H05B 3700

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active

053979621

ABSTRACT:
A source and method for generating high density plasma with inductive radio-frequency power coupling is provided in which coil antenna sections (34) within a plasma source (12) are used to generate a high-density uniform plasma. This plasma is then guided into transferred in a transfer chamber (14) and then to a processing chamber (16). Within the processing chamber (16), the plasma reacts with a semiconductor wafer (18) or another workpiece for plasma-enhanced deposition or etch processing.

REFERENCES:
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4496448 (1985-01-01), Tai et al.
patent: 4810935 (1989-03-01), Boswell
patent: 4871421 (1989-10-01), Ogle et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5122251 (1992-06-01), Campbell et al.
Article by A. J. Perry, D. Vender, and R. W. Boswell, "The Application of the Helicon Source to Plasma Processing", J. Vac. Sci. Technol. B 9 (2), Mar./Apr., 1991, pp. 310-317.

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