Source and drain protection and stringer-free gate formation...

Details Source and drain protection and stringer-free gate formation... Source and drain protection and stringer-free gate formation...

2006-04-18

2006-04-18

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S585000, C438S586000, C438S157000, C438S671000

Reexamination Certificate

active

07029959

ABSTRACT:
A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and depositing a gate material over the fin structure. The method may also include depositing an organic anti-reflective coating on the gate material and forming a gate mask on the organic anti-reflective coating. The organic anti-reflective coating around the gate mask may be removed, and the gate material around the gate mask may be removed to define a gate.

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Co-pending U.S. Appl. No. 10/301,732, filed Nov. 22, 2002, entitled “Method for Forming a Gate in a FINFET Device,” 17 page specification, 12 pages of drawings.

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