SOT CMOS device having differentially doped body extension for p

Details SOT CMOS device having differentially doped body extension for p SOT CMOS device having differentially doped body extension for p

1992-03-23

1994-03-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257347, 257655, H01L 2701, H01L 2712, H01L 2904, H01L 2936

Patent

active

052930521

ABSTRACT:
An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at an end portion of the extended body region, so as to provide a channel stop region that is effective to functionally interrupt a current leakage path or `parasitic` N-channel that may be induced along sidewall surface of the P-type material of the body/channel region. In addition, in order to inhibit radiation-induced leakage along a backside interface of the extended body region abutting an underlying dielectric substrate, a portion of the extended body region between the channel stop region and the body/channel region has an impurity concentration profile that is increased at the interface of the extended body region with the underlying dielectric substrate.

REFERENCES:
patent: 4054894 (1977-10-01), Heagerty et al.
patent: 4484209 (1984-11-01), Uchida
patent: 4489339 (1984-12-01), Uchida
patent: 4809056 (1989-02-01), Shirato et al.
patent: 5001528 (1991-03-01), Bahraman
patent: 5079604 (1992-01-01), Houston et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
patent: 5160989 (1992-11-01), Houston

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