SOS island edge passivation structure

Details SOS island edge passivation structure SOS island edge passivation structure

1980-07-08

1983-01-11

Rutledge, L. Dewayne

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

29571, 29578, 148175, 357 4, 357 23, 357 54, 357 56, 01L 2978, H01L 2712

Patent

active

043680852

ABSTRACT:
A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.

REFERENCES:
patent: 3740280 (1973-06-01), Ram Shaul Ronen
patent: 4057824 (1977-11-01), Woods
patent: 4097314 (1978-06-01), Schlesier et al.
patent: 4174217 (1979-11-01), Flatley
patent: 4199384 (1980-04-01), Hsu
patent: 4263709 (1981-04-01), Weitzel et al.
Proceedings of the 8th Conference ('76 International) On Solid State Devices in Japanese Journal of Applied Physics, vol. 16, 1977, Supplement 16-1, Tokyo, Y Sakai et al: "A New Isolation Technique for SOS/LSI's-Local Buried Oxide Isolation of SOS (LOBOS)," pp. 551-555.

Affiliated with

Also associated with

Rating

SOS island edge passivation structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOS island edge passivation structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOS island edge passivation structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-777361