SONOS type memory device

Details SONOS type memory device SONOS type memory device

2006-05-30

2006-05-30

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000

Reexamination Certificate

active

07053448

ABSTRACT:
A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.

REFERENCES:
patent: 2004/0069990 (2004-04-01), Mahajani et al.
patent: 10-2005-0070806 (2005-07-01), None
Robertson, John, “Band offsets of wide-band-gap oxides and implications for future electronic devices”, May/Jun. 2000, J. Vac. Sci. Technol., p. 1785-1791.

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