Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-12-24
2010-11-23
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S435000, C438S296000, C438S257000, C438S259000, C438S267000, C438S261000, C438S264000, C438S596000, C438S303000, C257S320000, C257S321000, C257S322000, C257S323000, C257S324000, C257S325000, C257S326000, C257SE29309, C257SE21210, C257S314000, C257S315000, C257S316000, C257S411000, C257S410000, C257S406000
Reexamination Certificate
active
07838406
ABSTRACT:
The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.
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Inoue Fumihiko
Maruyama Takayuki
Singal Ankush k
Spansion LLC
Toledo Fernando L
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