Solventless, resistless direct dielectric patterning

Details Solventless, resistless direct dielectric patterning Solventless, resistless direct dielectric patterning

2000-01-12

2003-01-21

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000, C430S331000, C216S062000

Reexamination Certificate

active

06509138

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to methods of lithographic patterning using solvent-free compositions. The invention also relates to direct patterning without resists.
BACKGROUND OF THE INVENTION
Current lithographic processes employed by the microelectronics industry have significant environmental, safety and health (ESH) impacts. The fabrication of semiconductor devices uses photoresist to lithographically define features at every mask level. Advanced complementary metal oxide semiconductor (CMOS) and bipolar integrated circuit (IC) processes can require in excess of twenty-five mask levels. This large number of processing steps results in significant volumes of chemicals being consumed. Wet solutions are used for the application of the photoresist layer and during the development step. Thus, improved resist processing presents a clear need and an opportunity to reduce the ESH impact of microelectronics manufacturing. The present invention fulfills this and other needs.
SUMMARY OF THE INVENTION
One embodiment of the present invention relates to a process for lithographically patterning a material on a substrate comprising the steps of:
(a) depositing a radiation sensitive material on the substrate by chemical vapor deposition;
(b) selectively exposing the radiation sensitive material to radiation to form a pattern; and
(c) developing the pattern using a supercritical fluid (SCF) as a developer.
Another embodiment of the present invention relates to microstructures formed by the foregoing process.
Another embodiment of the present invention relates to a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch.
Another embodiment of the present invention relates to a microelectronic structure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7% of dimension of the two-dimensional feature.
These and other embodiments of the invention are discussed in further detail below.


REFERENCES:
patent: 4288861 (1981-09-01), Swainson et al.
patent: 4297401 (1981-10-01), Chern et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4801477 (1989-01-01), Fudim
patent: 4944837 (1990-07-01), Nishikawa
patent: 4975347 (1990-12-01), Ahne et al.
patent: 5071730 (1991-12-01), Allen et al.
patent: 5185296 (1993-02-01), Morita
patent: 5439780 (1995-08-01), Joshi et al.
patent: 5589105 (1996-12-01), DeSimone et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5640255 (1997-06-01), Haines
patent: 5643474 (1997-07-01), Sangeeta
patent: 5665527 (1997-09-01), Allen et al.
patent: 5679737 (1997-10-01), DeSimone et al.
patent: 5707783 (1998-01-01), Stauffer et al.
patent: 5798965 (1998-08-01), Jun
patent: 5811357 (1998-09-01), Armacost et al.
patent: 5849809 (1998-12-01), Narang et al.
patent: 5888591 (1999-03-01), Gleason et al.
patent: 5910660 (1999-06-01), Hodel et al.
patent: 5937318 (1999-08-01), Warner, Jr. et al.
patent: 5977041 (1999-11-01), Honda
patent: 6013411 (2000-01-01), Aoai et al.
patent: 6014422 (2000-01-01), Boyd et al.
patent: 6020410 (2000-02-01), Hacker et al.
patent: 6149828 (2000-11-01), Vaarstra
patent: 08062843 (1996-03-01), None
Gallagher-Wetmore, “Supercritical Fluid Processing: A New Dry Technique for Photoresist Developing”, SPIE, vol. 2438, Jun. 1995, pp. 694-708.*
Knickelbein, et al., “New Devices for the Production of Intense Pulsed Jets of CF2: Laser Spectroscopic Characterization”, Mat. Res. Soc. Symp. Proc., 1985, pp. 23-33, vol. 38.
Kwan, et al., “Pyrolytic CVD of Poly(organosiloxane) Thin Films”, Chem. Vap. Deposition, 1997, pp. 299-301, vol. 3, No. 6.
Limb, et al., “Growth of fluorocarbon polymer thin films with high CF2fractions and low dangling bond concentrations by thermal chemical vapor deposition”, Appl. Phys. Lett., 1996, pp. 2810-2812, vol. 68, No. 20.

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