Solution for the selective removal of metal from aluminum...

Details Solution for the selective removal of metal from aluminum... Solution for the selective removal of metal from aluminum...

2005-12-12

2010-12-07

Vinh, Lan (Department: 1713)

Compositions

Etching or brightening compositions

Inorganic acid containing

C252S079100, C252S079200, C438S745000

Reexamination Certificate

active

07846349

ABSTRACT:
The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and water. A method of selectively removing metal from a substrate using this solution is also disclosed.

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European Search Report of European Patent Application No. EP 05 25 7916; Date of mailing: May 23, 2006.
Inoue Mayumi, Kuramasu Keizaburo, and Tsutsu Hiroshi; Patent Abstracts of Japan; abstract of “Etching Solution and Manufacture of Thin-Film Transistor Using the Same,”.
Publication No. 11087325 A, Mar. 30, 1999; Matsushita Electric Ind Co Ltd.

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