Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-24
2005-05-24
Sarkar, Asok Kumar (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000
Reexamination Certificate
active
06897147
ABSTRACT:
A method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by applying F ions to the copper layer to form a buffer zone on a surface of the copper layer and in-situ depositing a capping layer overlying the copper layer. The F ions remove copper oxide naturally formed on the copper surface and the buffer zone transfers thermal vertical strain in the copper to horizontal strain thereby preventing formation of copper hillocks.
REFERENCES:
patent: 5654232 (1997-08-01), Gardner
patent: 6162727 (2000-12-01), Schonauer et al.
patent: 6355571 (2002-03-01), Huang et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6482755 (2002-11-01), Ngo et al.
patent: 6500754 (2002-12-01), Erb et al.
patent: 6506677 (2003-01-01), Avanzino et al.
patent: 6515373 (2003-02-01), Barth
patent: 20030114000 (2003-06-01), Noguchi
Co-pending U.S. Appl. No. 09/998,787, filed Oct. 31, 2001, to the same assignee, “A Solution to the Problem of Copper Hillocks”.
Fan Chen-Peng
Fan Yun-Da
Leu Po-Hsiung
Liu Tsang-Yu
Tsai Shin-Yeu
Sarkar Asok Kumar
Taiwan Semiconductor Manufacturing Company
LandOfFree
Solution for copper hillock induced by thermal strain with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solution for copper hillock induced by thermal strain with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solution for copper hillock induced by thermal strain with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3427298