Soluble hard mask for interlayer dielectric patterning

Details Soluble hard mask for interlayer dielectric patterning Soluble hard mask for interlayer dielectric patterning

2006-12-20

2010-02-09

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S675000, C438S700000, C257SE21575, C257SE21577, C257SE21585

Reexamination Certificate

active

07659196

ABSTRACT:
Described herein are embodiments of a method that includes forming a hard mask over an interlayer dielectric layer, patterning said hard mask, etching said interlayer dielectric layer, and removing said hard mask during a post-etch clean with a wet etchant having a selectivity to etch said hard mask at a greater rate than said interlayer dielectric layer.

REFERENCES:
patent: 5670423 (1997-09-01), Yoo
patent: 6350682 (2002-02-01), Liao
patent: 6924228 (2005-08-01), Kim et al.
patent: 6984529 (2006-01-01), Stojakovic et al.
patent: 7132369 (2006-11-01), Delgadino et al.
patent: 7176126 (2007-02-01), Oh et al.
patent: 7241681 (2007-07-01), Kumar et al.
patent: 2006/0286794 (2006-12-01), Lin et al.
patent: 2007/0254476 (2007-11-01), Chou et al.
patent: 2008/0079155 (2008-04-01), Mule et al.

Affiliated with

Also associated with

Rating

Soluble hard mask for interlayer dielectric patterning does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Soluble hard mask for interlayer dielectric patterning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Soluble hard mask for interlayer dielectric patterning will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4172729