Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2003-07-18
2009-11-10
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S088000, C362S612000
Reexamination Certificate
active
07615795
ABSTRACT:
A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.
REFERENCES:
patent: 3593055 (1971-07-01), Gensic
patent: 3763405 (1973-10-01), Mitsuhata
patent: 3819974 (1974-06-01), Stevenson et al.
patent: 3875458 (1975-04-01), Kano et al.
patent: 3932881 (1976-01-01), Mita
patent: 4443532 (1984-04-01), Joy et al.
patent: 4573766 (1986-03-01), Bournay, Jr. et al.
patent: 4667036 (1987-05-01), Iden et al.
patent: 4845223 (1989-07-01), Seybold et al.
patent: 4859539 (1989-08-01), Tomko et al.
patent: 4992704 (1991-02-01), Stinson
patent: 5077161 (1991-12-01), Law
patent: 5110931 (1992-05-01), Dietz et al.
patent: 5126214 (1992-06-01), Tokalin
patent: 5131916 (1992-07-01), Eichenauer et al.
patent: 5143433 (1992-09-01), Farrell
patent: 5168781 (1992-12-01), Olson et al.
patent: 5208462 (1993-05-01), O'Connor et al.
patent: 5211467 (1993-05-01), Seder
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5264034 (1993-11-01), Dietz et al.
patent: 5405709 (1995-04-01), Littman et al.
patent: 5518808 (1996-05-01), Bruno et al.
patent: 5535230 (1996-07-01), Abe
patent: 5557168 (1996-09-01), Nakajima et al.
patent: 5563621 (1996-10-01), Silsby
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5583349 (1996-12-01), Norman et al.
patent: 5619356 (1997-04-01), Kozo et al.
patent: 5660461 (1997-08-01), Ignatius
patent: 5677417 (1997-10-01), Muellen et al.
patent: 5770887 (1998-06-01), Tadatomo et al.
patent: 5771039 (1998-06-01), Ditzik
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5869199 (1999-02-01), Kido
patent: 6137217 (2000-10-01), Pappalardo et al.
patent: 6600175 (2003-07-01), Baretz et al.
patent: 2006/0049416 (2006-03-01), Baretz et al.
patent: 2 017 409 (1979-10-01), None
patent: S50-79379 (1973-11-01), None
patent: 60170194 (1985-09-01), None
patent: S62-189770 (1987-08-01), None
patent: H01-179471 (1989-07-01), None
patent: 01-260707 (1989-10-01), None
patent: H02-91980 (1990-03-01), None
patent: H3-24692 (1991-03-01), None
patent: 04289691 (1992-10-01), None
patent: 5-152609 (1993-06-01), None
patent: H05-152609 (1993-06-01), None
patent: 07-099345 (1995-04-01), None
patent: H07-176794 (1995-07-01), None
patent: 07-235207 (1995-09-01), None
patent: H7-282609 (1995-10-01), None
patent: 08007614 (1996-01-01), None
patent: H08-7614 (1996-01-01), None
patent: H9-306393 (1999-03-01), None
patent: P2003-67318 (2003-08-01), None
patent: P2004-11214 (2005-09-01), None
patent: P2004-280288 (2005-09-01), None
patent: WO 91/08508 (1991-08-01), None
Zhang Jin Chao, et al., White Light Emitting Glasses, Journal of Solid State Chemistry, 93, 17-29 (1991), pp. 17-29.
Shosaku Tanaka, et al., Birght-White Light Electroluminescence Based on Nonradiative Energy Transfer in Ce-and Eu doped SrS Thin Films, Appl. Phys. Lett. 51 (21), Nov. 23, 1987, pp. 1661-1663.
M. Berggren, et al., White Light from an Electroluminescent Diode Made from Poly [3(4-octylphenyl)-2,2'-bithiophene] and an Oxadiazole Derivative, J. Appl. Phys. 76 (11), Dec. 1, 1994, pp. 7530-7534.
J. Kido, et al., White Light Emitting Organic Electroluminescent Devices Using the poly(N-vinylcarbazole) Emitter Layer Deoped with Three Fluorescent Dyes, Appln. Phys. Lett., 64 (7) Feb. 14, 1994, pp. 815-817.
N. El Jouhar, et al., White Light Generation Using Fluorecent Glasses Activated by Ce3+, Tb3+and MN2+Ions, J. De Physique IV, Colloque C2, suppelement au j. de Physique III, vol. 2, Oct. 1992, pp. 257-260.
Sato, Y., et al., “Full-Color Fluorescent Display Devices Using a Near-UV Light Emitting Diode”, Jpn J. Appln. Phys. vol. 35, 1996, pp. L838-L-839.
J.I. Pankove and E,.R. Levin, “Scanning Electron Microscopy Studies of GaN” J. Appln. Phys. vol. 46, (1975), pp. 1647-1652.
I. Akasaki, et al., “Photoluminescence of Mg-doped p-type GaN and Electroluminescence of GaN p-n Junction LED” J. Lumion, vol. 48/49, (1991) pp. 666-670.
H. Amano, et al., UV and Blue Electroluminescence from Al/GaN:Mg/GaN LED treated eith Low-Energy Electron Beam Irradiation (LEEBI), Inst. Phys. Conf. Ser. vol. 106, (1990), pp. 725,730.
Munch, et al., “Silicon Carbide Light-Emitting Diodes with Epitaxial Junctions” Solid State Electronics, vol. 19, (1976) pp. 871.
Maruska, H.P., Gallium nitride light-writing diodes (dissertation), Dissertation Submitted to Stanford University, Nov. 1973.
Hamakawa, Yoshihiro, et all., Toward a visible light display by amorphous SiC:H alloy system, Optoelectronics-Devices and Technologies, Dec. 1989, pp. 281-294, vol. 4, No. 2.
Kirano, Masao, et al., Various performances of fiber-optical temperature sensor utilizing infrared-to-visible conversion phosphor, Electrochemisty (JP), Feb. 1987, pp. 158-164, vol. 55, No. 2, Publisher: Electrochemical Society of Japan.
Kido, J., et al., White light-emitting organic electroluminescent devices using the pory(N-vinylcarbazole) emitter layer doped with . . . , Appl. Phys. Lett., Feb. 14, 1994, pp. 815-817, vol. 64, No. 7.
Larach, S., et al., Blue emitting luminescent phosphors: Review and status, Int'l Workshop on Electroluminescence, 1990, pp. 137-143.
Maruska, H.P., et al., Violet luminescence of Mg-doped GaN, Appl. Phys. Lett., Mar. 15, 1973, pp. 303-305, vol. 22, No. 6.
Mimura, Hidenori, et al., Visible electrolumlnescence from uc-SIC/porous Si/c-Si p-n junctions, Int J. Optoelectron., 1994, pp. 211-215, vol. 9, No. 2.
Miura, Noboru, et al., Several Blue-Emitting Thin-Film Electroluminescent Devices , Jpn. J. Appl. Phys., Jan. 15, 1992, pp. L46-L48, vol. 31, No. Part 2, No. 1A/B.
Tanaka, Shosaku, et al., White Light Emitting Thin-Film Electroluminescent Devices with SrS:Ce,Cl/ZnS:Mn Double Phosphor Layers, Jpn. J. Appl. Phys., Mar. 20, 1986, pp. L225-L227, vol. 25, No. 3.
Yoshimi, Masashi, et al., Amorphous carbon basis blue light electroluminescent device, Optoelectronics-Devices and Technologies. Jun. 1992, pp. 69-81, vol. 7, No. 1.
Zdanowski, Marek, Pulse operating up-converting phosphor LED, Electron Technol., 1978, pp. 49-61, vol. 11, 3.
Zhiming, Chen, et al., Amorphous thin film white-LED and its light-emitting mechanism, Conference Record of the 1991 International Display Research Conference, Oct. 1991, pp. 122-125.
U.S. Appl. No. 12/131,118, Filed Jun. 1, 2008, Baretz, Bruce, et al.
U.S. Appl. No. 12/131,119, Filed Jun. 1, 2008, Baretz, Bruce, et al.
Baretz Bruce
Tischler Michael A.
CREE, Inc.
Fahmy Wael
Hultquist Steven J.
Intellectual Property / Technology Law
Wael Abul
LandOfFree
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