Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-14
1999-03-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 77, 257379, 327427, 327429, 327436, 327562, 327563, 327566, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058805060
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to first a solid-state switching element that works with at least one semiconductor region, a pair of antiserially arranged semiconductor regions or more semiconductor regions with characteristic curves similar to those of FETs. Therefore, they also have internal body diodes in inverse operation.
BACKGROUND INFORMATION
In switching operations in electric circuits, the current flowing through a circuit is switched off when it exceeds a predetermined maximum, depending on the size of the current flowing through the circuit without resulting in a great overload current. With electronic switches, this problem is usually solved by measuring the voltage drop at a resistor as a triggering criterion, with a controller logic triggering a protective system to interrupt the circuit. Instead of a resistor, current transformers are also used. With electromagnetic circuit-breakers, an armature of a coil through which current is flowing operates on a breaker mechanism to open contacts in the conductors to be disconnected. With all such arrangements, the current may still assume a high value until disconnected due to the operating delay after a short-circuit has occurred.
SUMMARY OF THE INVENTION
The object of the present invention is to develop a solid-state switching element that will permit switching that is relatively free of delay.
This object is achieved according to the present invention with a solid-state switching element. The semiconductor regions, in particular in the cell design, each have two electron donors or sources in addition to an electron collector or drain and an electrode or gate that controls the flow of electrons. These electrodes are combined in cell design. The effective semiconductor area connected to the first source, which is available as the load current electrode or load source, is larger than that connected to the second source, which is available as the gate electrode or the control source. Depending on the area ratio of the layout, the current carried over the control source may be reduced in relation to the load source; such a current is more easily generated and processed using electronic means.
An advantageous ratio of the semiconductor area of the load source to that of the control source is 10.sup.2 :1 through 10.sup.4 :1. The semiconductor regions are preferably made of a material that can withstand an operating temperature of 300.degree. C. to 600.degree. C. A suitable material is silicon carbide, SiC.
The solid-state switching element may be designed so that the control source is arranged at the center of a surrounding load source field. The load source may be arranged in a ring around the control source.
The solid-state switching element may accommodate other elements, e.g., an ohmic resistor, in integrated chip technology. A resistor is preferably inserted electrically as an additional element between the load source and control source.
Solid-state switches can easily be constructed from such solid-state switching elements. According to another embodiment of a solid-state switch with an element having two semiconductor regions, the control sources are connected to the negative input of an operational amplifier and the load sources are connected to the positive input. Regarding the potential, an ohmic resistor is inserted between the two terminals, where the gate electrodes of the two semiconductor regions are connected to the output of the operational amplifier. The drain electrodes of the two semiconductor regions are available as load terminals. Such a solid-state switch can be integrated advantageously in a chip or it may work with discrete components. For higher switching capacities, the semiconductor regions may be mounted on a heat sink.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a solid-state switching element in combination with a control unit and an electromagnetic switch according to the present invention.
FIG. 2 shows a characteristics field of the solid-state element shown in FIG. 1.
FIG. 3 illustrate
REFERENCES:
patent: 5714782 (1998-02-01), Nakagawa et al.
Maier Reinhard
Mitlehner Heinz
Zierhut Ingeborg
Zierhut, deceased Hermann
Ngo Ngan V.
Siemens Aktiengesellschaft
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