Semiconductor device manufacturing: process – Having integral power source
Patent
1998-07-27
2000-09-12
Elms, Richard
Semiconductor device manufacturing: process
Having integral power source
438604, H01L 2100
Patent
active
061176974
ABSTRACT:
A method for making a magnetoresistive sensing device including depositing an ultrathin active film responsive to changes in magnetic field energy onto a compliant layer of periodic table group III-V semiconductor material on a semiconductor substrate wafer, the compliant layer being capable of retaining strain energy resulting from the layering semiconductor materials with different lattice constants. This method produces a battery operable ultrathin device highly sensitive to changes in magnetic field flux.
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Molecular Beam Epitaxy, M.A. Herman and H. Sitter, copyright 1989, pp 219-225.
Eyink Kurt G.
Lampert William V.
Seaford Matthew L.
Tomich David H.
Elms Richard
Hollins Gerald B.
Kundert Thomas L.
Smith Bradley K.
The United States of America as represented by the Secretary of
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