Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-11
2008-03-11
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S443000, C257S448000, C257S291000
Reexamination Certificate
active
07342270
ABSTRACT:
A solid state imaging system includes a plurality of amplifying units that are placed one by one for every pair of photoelectric conversion areas. Each amplifying unit is placed side-by-side in one direction of a two-dimensional matrix for outputting a pixel signal according to a photogenerated charge retained in a floating diffusion area. A plurality of transfer controlling elements are placed in pairs for each pair of the photoelectric conversion areas for controlling the transfer of the photogenerated charge by changing a potential barrier of a photogenerated charge transfer route between each of the accumulation wells in the pair of photoelectric conversion areas and the corresponding floating diffusion area. A plurality of transfer gate lines are connected to each of the transfer controlling elements in the plural photoelectric conversion areas that are aligned in the other direction of the two-dimensional matrix.
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Chiu Tsz
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Wilczewski Mary
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