Solid-state imaging device with reduced smear

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S734000, C257S146000

Reexamination Certificate

active

07550393

ABSTRACT:
A solid-state imaging device includes a light sensor formed in a semiconductor substrate. In addition, the solid-state imaging device includes a light block layer with an opening formed through the light block layer over at least a portion of the light sensor. Furthermore, at least one sidewall of the light block layer facing the opening is concave shaped for reducing smear phenomenon.

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Japanese Patent No. JP2000252452 to Masayuki et al., having Publication date of Nov. 13, 2001 (w/ English Abstract page).
Japanese Patent Application No. 05-170343 to Masaru et al. entitled “Solid-State Image Sensing Element” (w/ English Abstract page).
Japanese Patent Application No. 09-007661 to Takashi entitled “Solid-State Imaging Element and Its Manufacturing Method” (w/ English Abstract page).

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