Solid-state imaging device, solid-state imaging apparatus...

Details Solid-state imaging device, solid-state imaging apparatus... Solid-state imaging device, solid-state imaging apparatus...

2007-03-27

2007-03-27

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S184000, C257S187000, C257S461000, C257S506000

Reexamination Certificate

active

10423139

ABSTRACT:
To arrange diffusion-inhibitory films5a,5b,and5cfor inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit2,the diffusion-inhibitory films5a,5b,and5cformed on a region above the light receiving unit2are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings4a,4b,and4c,and only a passivation film12and interlayer insulating films3a,3b,and3care arranged in the region on or above the light receiving unit2.Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light13highly efficiently passes through these insulating films and comes into the light receiving unit2.The light receiving unit2can thereby receive a sufficient quantity of the incident light13.

REFERENCES:
patent: 6249055 (2001-06-01), Dubin
patent: 6274917 (2001-08-01), Fan et al.
patent: 6316814 (2001-11-01), Nagata et al.
patent: 6507059 (2003-01-01), Chen et al.
patent: 6545331 (2003-04-01), Miida
patent: 6599835 (2003-07-01), Marathe et al.

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