Solid-state imaging device, production method and drive...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27133

Reexamination Certificate

active

07667251

ABSTRACT:
A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.

REFERENCES:
patent: 5912482 (1999-06-01), Morimoto
patent: 2002/0024066 (2002-02-01), Ide
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European Search Report dated Aug. 21, 2006.
Japanese Office Action issued on May 19, 2009 corresponding to JP Application No. 2004-221981.
Japanese Office Action issued on Oct. 13, 2009 in connection with JP Application No. 2004-221981.

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