Solid-state imaging device, method of producing the same,...

Details Solid-state imaging device, method of producing the same,... Solid-state imaging device, method of producing the same,...

2007-06-19

2007-06-19

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S222000

Reexamination Certificate

active

11217777

ABSTRACT:
The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.

REFERENCES:
patent: 6335220 (2002-01-01), Shioyama et al.
patent: 6580105 (2003-06-01), Hatano et al.

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