Solid state imaging device, method of manufacturing the...

Details Solid state imaging device, method of manufacturing the... Solid state imaging device, method of manufacturing the...

2010-04-20

2011-10-11

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257SE27133

Reexamination Certificate

active

08034649

ABSTRACT:
A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

REFERENCES:
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patent: 2008/0070395 (2008-03-01), Yen et al.
patent: 01-256168 (1989-10-01), None
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patent: 2007-088305 (2007-04-01), None
Japanese Office Action issued on Feb. 8, 2011 in connection with JP counterpart application No. 2007-265287.

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