Solid-state imaging device, method of manufacturing the...

Details Solid-state imaging device, method of manufacturing the... Solid-state imaging device, method of manufacturing the...

2008-04-25

2010-11-30

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S232000, C257S234000, C257S440000

Reexamination Certificate

active

07842987

ABSTRACT:
A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

REFERENCES:
patent: 7453110 (2008-11-01), Hwang
patent: 2005/0006676 (2005-01-01), Watanabe
patent: 2006-049921 (2006-02-01), None

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