Solid-state imaging device, electronic module and electronic...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S290000, C257S291000

Reexamination Certificate

active

07902578

ABSTRACT:
A solid-state imaging device including an imaging area formed of a plurality of pixels arrayed in a two-dimensional matrix is provided. The solid-state imaging device includes: a photoelectric conversion portion including a charge accumulation region provided on a semiconductor substrate; a read transistor for reading electric charges from the photoelectric conversion portion; and a gettering site for separating metal impurities within the semiconductor substrate from at least the photoelectric conversion portion. The photoelectric conversion portion is provided on the surface side of the semiconductor substrate, and the gettering site is provided on the rear side away from the semiconductor substrate.

REFERENCES:
patent: 2003/0209712 (2003-11-01), Fujita et al.
patent: 2005/0139828 (2005-06-01), Maruyama et al.
patent: 2005/0179053 (2005-08-01), Ezaki et al.
patent: 2006/0197007 (2006-09-01), Iwabuchi et al.
patent: 2006/0281215 (2006-12-01), Maruyama et al.
patent: 08-321509 (1996-12-01), None
patent: 2001-024200 (2001-01-01), None
patent: 2005-294705 (2005-10-01), None
patent: 2007-003552 (2007-01-01), None
Japanese Patent Office Action corresponding to Japanese Serial No. 2007-003552 dated Apr. 7, 2009.

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