Solid-state imaging device and production method therefor

Details Solid-state imaging device and production method therefor Solid-state imaging device and production method therefor

2003-12-12

2008-10-28

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S293000, C257SE27133

Reexamination Certificate

active

07442973

ABSTRACT:
By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured.In a solid-state imaging device including a light-receiving section (1) which performs photoelectric conversion in response to receipt of light and a waveguide (20) composed of a light-transmissive material formed in an insulating film5which covers a substrate provided with the light-receiving section (1), in which the waveguide (20) guides incident light from outside to the light-receiving section (1), the waveguide (20) is provided with a forward tapered portion in which the size of the planar shape viewed from the direction of incident light decreases from the light incident side surface toward the light-receiving section.

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Japanese Office Action issued on Oct. 19, 2007.
Japanese Office Action issued on Oct. 23, 2007.

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