Solid state imaging device and producing method thereof

Details Solid state imaging device and producing method thereof Solid state imaging device and producing method thereof

2008-03-18

2008-03-18

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S432000

Reexamination Certificate

active

11785839

ABSTRACT:
A semiconductor substrate of a solid state imaging device is connected to a cover glass, and then a backgrind is performed so as to make the thickness smaller. On a first face of the semiconductor substrate is formed plural units which is constructed of image sensors and plural contact terminals. At positions of the contact terminals, plural through-holes are formed on the bottom side of the semiconductor substrate, and the contact terminals appear on a second surface of the semiconductor substrate. On an interconnection circuit pattern of the assembly substrate are formed stud bumps. When the semiconductor substrate is assembled onto the assembly substrate, the stud bumps enter into the through-holes to contact to the contact terminals. Thus the interconnection circuit pattern is electrically connected to the image sensors.

REFERENCES:
patent: 6453126 (2002-09-01), Abe
patent: 6930327 (2005-08-01), Maeda et al.
patent: 2003/0080434 (2003-05-01), Wataya
patent: 08-5566 (1996-02-01), None
patent: 2001-351997 (2001-12-01), None

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