Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

2007-11-16

2010-12-14

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000

Reexamination Certificate

active

07851838

ABSTRACT:
A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.

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Japanese Patent Office Action corresponding to Japanese Serial No. 2008-123004 dated Mar. 18, 2010.

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