Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000
Reexamination Certificate
active
11137635
ABSTRACT:
A solid-state imaging device is provided in which noise to an image signal is restrained and miniaturization is facilitated in a peripheral circuit formation region.A solid-state imaging device includes a pixel formation region4and a peripheral circuit formation region20formed in the same semiconductor substrate; in the peripheral circuit formation region20a first element isolation portion is formed of an element isolation layer21in which an insulation layer is buried in a semiconductor substrate10; in the pixel formation region4a second element isolation portion made of an element isolation region11formed inside the semiconductor substrate10and an element isolation layer12projecting upward from the semiconductor substrate10is formed; and a photoelectric conversion element16(14, 15) is formed extending to a position under the element isolation layer12of the second element isolation portion.
REFERENCES:
patent: 6661045 (2003-12-01), Ishiwata
patent: 6744084 (2004-06-01), Fossum
patent: 7122840 (2006-10-01), Hsu et al.
Nguyen Cuong
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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