Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-07
2006-11-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S291000, C348S297000, C250S208100, C382S254000
Reexamination Certificate
active
07132705
ABSTRACT:
A solid state imaging device including: a photoelectric conversion element generating photo-generated charges corresponding to incident light; an accumulation well accumulating photo-generated charges; a modulation well storing photo-generated charges from the accumulation well; a modulation transistor whose channel threshold voltage is controlled by the stored photo-generated charges and that outputs a pixel signal corresponding to the photo-generated charges; a transfer control element changing the potential barrier of a transfer channel between the accumulation well and the modulation well to control transfer of the photo-generated charges; and an unwanted charges discharge control element controlling the potential barrier of an unwanted charges discharge channel coupled to the accumulation well, and discharging charges which overflow from the accumulation well through the unwanted charges discharge channel during all periods other than the transfer period when photo-generated charges are transferred from the accumulation well to the modulation well.
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Pham Long
Rao Shrininvas H.
Seiko Epson Corporation
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