Solid-state imaging device and method of detecting optical signa

Details Solid-state imaging device and method of detecting optical signa Solid-state imaging device and method of detecting optical signa

1998-11-17

2000-04-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257294, 257435, 257443, H01L 31062, H01L 31113

Patent

active

06051857&

ABSTRACT:
The present invention is a method for detecting photo signals using an imaging device, comprising steps of photo-generating holes in a well region 15 of a photo-diode by a signal light, transferring the photo-generated holes through a bulk of the well region 15 to a heavily doped buried layer 25 which is formed in the well region 15 near a source region 16 by doping that region with impurity heavier than the well region (15) of an insulated gate FET, storing the photo-generated holes in the heavily doped buried layer 25 to thereby change the threshold of the FET corresponding to the amount of the photo-generated charge, and reading the change in the threshold as the amount of signal light received by the photo-sensor.

REFERENCES:
patent: 4630091 (1986-12-01), Kuroda et al.
patent: 5808333 (1998-09-01), Maruyama et al.
patent: 5872371 (1999-02-01), Guidash et al.

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